R-02 · Oct 2025 - Present
Ongoing
MBCFET Modeling
GAA Multi-Bridge-Channel FET simulation in Silvaco TCAD, targeting sub-5 nm technology nodes.
- Analysis of short-channel effects, DIBL and subthreshold behaviour.
- Nanosheet dimension optimisation to maximise Ion/Ioff ratios.
- Electrostatic design-space sweeps across stack geometries.
TCAD
MBCFET
Sub-5nm
Device Physics
